N-Channel Power MOSFET, 500V Vds, 100A Continuous Drain Current, 49mΩ Max Drain-Source On-Resistance. Features 1.89kW Max Power Dissipation, 26ns Fall Time, and 110ns Turn-Off Delay. Silicon Metal-oxide Semiconductor FET with 3-pin TO-264-3 package, suitable for through-hole mounting. Operates from -55°C to 150°C, RoHS compliant.
PackageTO-264-3
MountingThrough Hole
PolarityN-CHANNEL
Power1.25kW
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Technical Specifications
Ixys IXFB100N50P technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 49mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 49MR |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 20nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.89kW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.25kW |
| Radiation Hardening | No |
| Rds On Max | 49mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 110ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFB100N50P Datasheet
Download the complete datasheet for Ixys IXFB100N50P to view detailed technical specifications.
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