N-Channel Power MOSFET featuring 1000V drain-source breakdown voltage and 38A continuous drain current. This silicon, metal-oxide semiconductor FET offers a maximum on-resistance of 250mΩ and a power dissipation of 890W. Designed for through-hole mounting in a TO-264 package, it operates from -55°C to 150°C with fast switching characteristics, including a 25ns turn-on delay and 15ns fall time.
PackageTO-264-3
MountingThrough Hole
PolarityN-CHANNEL
Power890W
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Technical Specifications
Ixys IXFB38N100Q2 technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 38A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 250MR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26.59mm |
| Input Capacitance | 13.5nF |
| Lead Free | Lead Free |
| Length | 20.29mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 890W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 890W |
| Rds On Max | 250mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 57ns |
| Turn-On Delay Time | 25ns |
| Width | 5.31mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFB38N100Q2 Datasheet
Download the complete datasheet for Ixys IXFB38N100Q2 to view detailed technical specifications.
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