N-Channel Power MOSFET featuring 1000V drain-source breakdown voltage and 44A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 220mΩ drain-source on-resistance. Designed for high power applications with a maximum power dissipation of 1.56kW, it operates within a temperature range of -55°C to 150°C. The component is housed in a TO-264-3 package and supports through-hole mounting.
PackageTO-264-3
MountingThrough Hole
PolarityN-CHANNEL
Power1.56kW
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Technical Specifications
Ixys IXFB44N100Q3 technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 44A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 220mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 220MR |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26.59mm |
| Input Capacitance | 13.6nF |
| Lead Free | Lead Free |
| Length | 20.29mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.56kW |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.56kW |
| Rds On Max | 220mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 66ns |
| Turn-On Delay Time | 48ns |
| Width | 5.31mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFB44N100Q3 Datasheet
Download the complete datasheet for Ixys IXFB44N100Q3 to view detailed technical specifications.
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