The IXFC16N50P is a high-power N-channel MOSFET with a maximum operating voltage of 500V and a continuous drain current rating of 10A. It features a low drain to source resistance of 450mR and a maximum power dissipation of 125W. The device is packaged in a through-hole configuration and is compliant with lead-free standards. The IXFC16N50P operates within a temperature range of -55°C to 150°C.
Current Rating16A
MountingThrough Hole
PolarityN-CHANNEL
Power125W
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Technical Specifications
Ixys IXFC16N50P technical specifications.
General
| Continuous Drain Current (ID) | 10A |
| Current Rating | 16A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 450mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.25nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Rds On Max | 450mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 70ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFC16N50P Datasheet
Download the complete datasheet for Ixys IXFC16N50P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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