N-Channel Power MOSFET featuring 200V drain-source breakdown voltage and 35A continuous drain current. Offers low on-resistance of 36mΩ at a nominal gate-source voltage of 5V. Designed for high-temperature operation up to 175°C with a maximum power dissipation of 120W. This through-hole mounted component has a 2.5kV isolation voltage and a fall time of 21ns.
MountingThrough Hole
PolarityN-CHANNEL
Power120W
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Technical Specifications
Ixys IXFC74N20P technical specifications.
General
| Continuous Drain Current (ID) | 35A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 36mR |
| Drain to Source Voltage (Vdss) | 200V |
| Dual Supply Voltage | 200V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.3nF |
| Isolation Voltage | 2.5kV |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 120W |
| Rds On Max | 36mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PolarHT™ HiPerFET™ |
| Termination | Through Hole |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 60ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFC74N20P Datasheet
Download the complete datasheet for Ixys IXFC74N20P to view detailed technical specifications.
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