Ixys
IXFC80N10
Power Field-Effect Transistor, 80A I(D), 100V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS220, 3 PIN
MountingThrough Hole
PolarityN-CHANNEL
Power230W
Quick Jump:
Technical Specifications
Ixys IXFC80N10 technical specifications.
General
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
12.5mR
Drain to Source Voltage (Vdss)
100V
Fall Time
31ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.8nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
230W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
230W
Rds On Max
12.5mR
RoHS Compliant
Yes
Series
HiPerFET™
Turn-Off Delay Time
95ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFC80N10 Datasheet
Download the complete datasheet for Ixys IXFC80N10 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
