N-channel power MOSFET featuring 150V drain-to-source breakdown voltage and 42A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 26mΩ drain-to-source resistance. Designed for through-hole mounting, it operates within a -55°C to 175°C temperature range and supports a maximum power dissipation of 120W. Key electrical characteristics include a 5V threshold voltage and 3.5nF input capacitance.
MountingThrough Hole
PolarityN-CHANNEL
Power120W
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Technical Specifications
Ixys IXFC96N15P technical specifications.
General
| Continuous Drain Current (ID) | 42A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 26mR |
| Drain to Source Voltage (Vdss) | 150V |
| Dual Supply Voltage | 150V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.5nF |
| Isolation Voltage | 2.5kV |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 120W |
| Rds On Max | 26mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PolarHT™ HiPerFET™ |
| Termination | Through Hole |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 66ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFC96N15P Datasheet
Download the complete datasheet for Ixys IXFC96N15P to view detailed technical specifications.
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