The IXFE180N10 is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 100V and a continuous drain current of 176A. The device has a maximum power dissipation of 500W and a gate to source voltage of 20V. It is packaged in a SOT-227-4 flange mount package and is RoHS compliant.
PackageSOT-227-4
MountingChassis Mount
PolarityN-CHANNEL
Power500W
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Technical Specifications
Ixys IXFE180N10 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 176A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9.1nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Chassis Mount |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Rds On Max | 8mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 140ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFE180N10 Datasheet
Download the complete datasheet for Ixys IXFE180N10 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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