Ixys
IXFE55N50
Power Field-Effect Transistor, 47A I(D), 500V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN
PackageSOT-227-4
MountingChassis Mount
PolarityN-CHANNEL
Power500W
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Technical Specifications
Ixys IXFE55N50 technical specifications.
General
Package/Case
SOT-227-4
Continuous Drain Current (ID)
47A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
90mR
Drain to Source Voltage (Vdss)
500V
Fall Time
45ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
9.4nF
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
500W
Mount
Chassis Mount
Package Quantity
10
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
500W
Rds On Max
90mR
RoHS Compliant
Yes
Series
HiPerFET™
Turn-Off Delay Time
120ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFE55N50 Datasheet
Download the complete datasheet for Ixys IXFE55N50 to view detailed technical specifications.
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