The IXFG55N50 is a high-power N-channel MOSFET with a maximum operating temperature range of -40°C to 150°C. It features a continuous drain current of 48A and a drain to source breakdown voltage of 500V. The device has a drain to source resistance of 90mR and a maximum power dissipation of 400W. It is packaged in a through-hole package and is compliant with RoHS regulations.
MountingThrough Hole
PolarityN-CHANNEL
Power400W
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Technical Specifications
Ixys IXFG55N50 technical specifications.
General
| Continuous Drain Current (ID) | 48A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9.4nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 400W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 400W |
| Rds On Max | 90mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 120ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFG55N50 Datasheet
Download the complete datasheet for Ixys IXFG55N50 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.