Ixys
IXFH10N90
Power Field-Effect Transistor, 10A I(D), 900V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
PackageTO-247-3
Current Rating10A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH10N90 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
10A
Current Rating
10A
Drain to Source Breakdown Voltage
900V
Drain to Source Resistance
1.1R
Drain to Source Voltage (Vdss)
900V
Fall Time
18ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.2nF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Rds On Max
1.1R
RoHS Compliant
Yes
Series
HiPerFET™
Turn-Off Delay Time
51ns
DC Rated Voltage
900V
Compliance
RoHS
Compliant
Datasheet
Ixys IXFH10N90 Datasheet
Download the complete datasheet for Ixys IXFH10N90 to view detailed technical specifications.
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