N-Channel Power MOSFET featuring 800V drain-source breakdown voltage and 11A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 950mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-247AD package, it supports a maximum power dissipation of 300W. Key switching parameters include a 32ns fall time and 63ns turn-off delay time.
PackageTO-247AD
Current Rating11A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH11N80 technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 11A |
| Current Rating | 11A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 950mR |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 950mR |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 950mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 63ns |
| DC Rated Voltage | 800V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH11N80 Datasheet
Download the complete datasheet for Ixys IXFH11N80 to view detailed technical specifications.
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