
N-Channel Power MOSFET featuring 800V drain-source breakdown voltage and 11A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 950mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-247AD package, it supports a maximum power dissipation of 300W. Key switching parameters include a 32ns fall time and 63ns turn-off delay time.
Ixys IXFH11N80 technical specifications.
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