N-Channel Power MOSFET featuring 800V drain-source breakdown voltage and 11A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 950mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-247AD package, it supports a maximum power dissipation of 300W. Key switching parameters include a 32ns fall time and 63ns turn-off delay time.
PackageTO-247AD
Current Rating11A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH11N80 technical specifications.
General
Package/Case
TO-247AD
Continuous Drain Current (ID)
11A
Current Rating
11A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
950mR
Drain to Source Voltage (Vdss)
800V
Drain-source On Resistance-Max
950mR
Fall Time
32ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.2nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
950mR
RoHS Compliant
Yes
Series
HiPerFET™
Turn-Off Delay Time
63ns
DC Rated Voltage
800V
Compliance
RoHS
Compliant
Datasheet
Ixys IXFH11N80 Datasheet
Download the complete datasheet for Ixys IXFH11N80 to view detailed technical specifications.
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