IXFH120N15P

150V 120A N-Channel MOSFET TO-247AD 16mR

N-Channel Power MOSFET, 150V Drain to Source Voltage (Vdss), 120A Continuous Drain Current (ID), and 16mΩ Rds On Max. Features a 600W Max Power Dissipation and operates within a -55°C to 175°C temperature range. This silicon Metal-oxide Semiconductor FET is housed in a TO-247AD package with through-hole mounting. Key electrical characteristics include a 5V Threshold Voltage, 26ns Fall Time, 85ns Turn-Off Delay Time, 33ns Turn-On Delay Time, and 4.9nF Input Capacitance.

PackageTO-247AD

MountingThrough Hole

PolarityN-CHANNEL

Power600W

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Technical Specifications

Ixys IXFH120N15P technical specifications.

General

Package/Case	TO-247AD
Continuous Drain Current (ID)	120A
Drain to Source Breakdown Voltage	150V
Drain to Source Resistance	16mR
Drain to Source Voltage (Vdss)	150V
Fall Time	26ns
Gate to Source Voltage (Vgs)	20V
Height	21.46mm
Input Capacitance	4.9nF
Length	16.26mm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	600W
Mount	Through Hole
Package Quantity	30
Packaging	Box
Polarity	N-CHANNEL
Power Dissipation	600W
Rds On Max	16mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	PolarHT™ HiPerFET™
Threshold Voltage	5V
Turn-Off Delay Time	85ns
Turn-On Delay Time	33ns
Width	5.3mm