N-Channel Power MOSFET, 200V Drain-Source Breakdown Voltage, 120A Continuous Drain Current, and 22mΩ Max Drain-Source On-Resistance. Features a 714W Max Power Dissipation, 175°C Max Operating Temperature, and 31ns Fall Time. This silicon Metal-Oxide-Semiconductor FET is housed in a TO-247 package for through-hole mounting. Includes 6nF Input Capacitance and 5V Threshold Voltage.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power714W
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Technical Specifications
Ixys IXFH120N20P technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 22MR |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 21.46mm |
| Input Capacitance | 6nF |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 714W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Box |
| Polarity | N-CHANNEL |
| Power Dissipation | 714W |
| Rds On Max | 22mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 30ns |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH120N20P Datasheet
Download the complete datasheet for Ixys IXFH120N20P to view detailed technical specifications.
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