N-channel silicon power MOSFET with 1000V drain-source breakdown voltage and 12A continuous drain current. Features 1.05 ohm drain-source resistance (Rds On Max) and 300W maximum power dissipation. Operates with a gate-source voltage up to 20V and a nominal threshold voltage of 4.5V. This through-hole component, packaged in TO-247AD, offers a fall time of 32ns and turn-off delay of 62ns, with an input capacitance of 4nF. RoHS compliant and suitable for operation between -55°C and 150°C.
PackageTO-247AD
Current Rating12A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Ixys IXFH12N100 technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 12A |
| Current Rating | 12A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 1.05R |
| Drain to Source Voltage (Vdss) | 1kV |
| Dual Supply Voltage | 1kV |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Nominal Vgs | 4.5V |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 1.05R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 62ns |
| DC Rated Voltage | 1kV |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH12N100 Datasheet
Download the complete datasheet for Ixys IXFH12N100 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
