N-Channel Power MOSFET, 1000V Vdss, 12A continuous drain current, and 1.05 Ohm Rds On. This silicon Metal-Oxide-Semiconductor FET features a TO-247 plastic package for through-hole mounting. Key specifications include a 300W power dissipation, 12ns fall time, and 31ns turn-off delay. Operating temperature range is -55°C to 150°C.
PackageTO-247AD
MountingThrough Hole
PolarityN-CHANNEL
Power300W
Quick Jump:
Technical Specifications
Ixys IXFH12N100F technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 1.05R |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 1.05R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerRF™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 31ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH12N100F Datasheet
Download the complete datasheet for Ixys IXFH12N100F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
