N-Channel Power MOSFET, 12A continuous drain current (ID) and 1kV drain-source breakdown voltage (Vdss). Features 1.05 ohm Rds On, 300W max power dissipation, and a TO-247AD through-hole package. Operates from -55°C to 150°C with a 5.5V threshold voltage and 20V gate-source voltage rating. Includes 20ns turn-on delay and 40ns turn-off delay.
PackageTO-247AD
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Ixys IXFH12N100Q technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 1.05R |
| Drain to Source Voltage (Vdss) | 1kV |
| Dual Supply Voltage | 1kV |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 21.46mm |
| Input Capacitance | 2.9nF |
| Length | 16.26mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Nominal Vgs | 5.5V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 1.05R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Through Hole |
| Threshold Voltage | 5.5V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 20ns |
| Weight | 6g |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH12N100Q Datasheet
Download the complete datasheet for Ixys IXFH12N100Q to view detailed technical specifications.
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