The IXFH12N120 is a high-power N-channel MOSFET with a drain-to-source breakdown voltage of 1.2kV and a continuous drain current of 12A. It has a maximum power dissipation of 500W and a maximum operating temperature of 150°C. The device is packaged in a TO-247AD package, which is suitable for through-hole mounting. The IXFH12N120 is RoHS compliant and lead-free.
PackageTO-247AD
MountingThrough Hole
PolarityN-CHANNEL
Power500W
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Technical Specifications
Ixys IXFH12N120 technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 1.2kV |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Radiation Hardening | No |
| Rds On Max | 1.4R |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH12N120 Datasheet
Download the complete datasheet for Ixys IXFH12N120 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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