N-Channel Power MOSFET featuring 1200V drain-source breakdown voltage and 12A continuous drain current. This through-hole component offers a low 1.35-ohm drain-source on-resistance and a maximum power dissipation of 543W. Key specifications include a 6.5V threshold voltage, 5.4nF input capacitance, and 34ns fall time. Designed for high voltage applications, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power543W
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Technical Specifications
Ixys IXFH12N120P technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 1.2kV |
| Drain to Source Resistance | 1.35R |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Drain-source On Resistance-Max | 1.35R |
| Fall Time | 34ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 5.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 543W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 543W |
| Rds On Max | 1.35R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
| Threshold Voltage | 6.5V |
| Turn-Off Delay Time | 62ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH12N120P Datasheet
Download the complete datasheet for Ixys IXFH12N120P to view detailed technical specifications.
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