IXYS

IXFH14N60P

Datasheet

600V 14A N-CH MOSFET, 550mR Rds On, TO-247

Ixys

IXFH14N60P

Name: IXFH14N60P Ixys
Brand: Ixys
SKU: IXFH14N60P

600V 14A N-CH MOSFET, 550mR Rds On, TO-247

N-Channel Power MOSFET, 600V Drain to Source Voltage, 14A Continuous Drain Current, and 550mΩ Rds On. Features a 300W maximum power dissipation and a TO-247 package for through-hole mounting. Operates within a temperature range of -55°C to 150°C, with typical turn-on delay of 23ns and fall time of 26ns. This silicon Metal-oxide Semiconductor FET is RoHS compliant.

PackageTO-247

Current Rating14A

MountingThrough Hole

PolarityN-CHANNEL

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Technical Specifications

Ixys IXFH14N60P technical specifications.

General

Package/Case	TO-247
Continuous Drain Current (ID)	14A
Current Rating	14A
Drain to Source Breakdown Voltage	600V
Drain to Source Resistance	550mR
Drain to Source Voltage (Vdss)	600V
Dual Supply Voltage	600V
Fall Time	26ns
Gate to Source Voltage (Vgs)	30V
Height	21.46mm
Input Capacitance	2.5nF
Lead Free	Lead Free
Length	16.26mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	300W
Mount	Through Hole
Nominal Vgs	5.5V
Package Quantity	30
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	300W
Rds On Max	550mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	HiPerFET™, PolarHT™
Termination	Through Hole
Threshold Voltage	5.5V
Turn-Off Delay Time	70ns
Turn-On Delay Time	23ns
DC Rated Voltage	600V
Width	5.3mm