Ixys
IXFH15N60
Power Field-Effect Transistor, 15A I(D), 600V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
PackageTO-247AD
Current Rating15A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH15N60 technical specifications.
General
Package/Case
TO-247AD
Continuous Drain Current (ID)
15A
Current Rating
15A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
500mR
Drain to Source Voltage (Vdss)
600V
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.5nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Rds On Max
500mR
RoHS Compliant
Yes
Series
HiPerFET™
Turn-Off Delay Time
70ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Ixys IXFH15N60 Datasheet
Download the complete datasheet for Ixys IXFH15N60 to view detailed technical specifications.
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