N-Channel Power MOSFET, 800V Vds, 15A Continuous Drain Current, 600mΩ Rds On. Features 300W Max Power Dissipation, 4.5V Nominal Vgs, and 32ns Fall Time. Packaged in TO-247AD for through-hole mounting. RoHS compliant silicon metal-oxide semiconductor FET with 150°C max operating temperature.
PackageTO-247AD
Current Rating15A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Ixys IXFH15N80 technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 15A |
| Current Rating | 15A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 600mR |
| Dual Supply Voltage | 800V |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.87nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Nominal Vgs | 4.5V |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 600mR |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 250ns |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Through Hole |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 63ns |
| DC Rated Voltage | 800V |
| Weight | 6g |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH15N80 Datasheet
Download the complete datasheet for Ixys IXFH15N80 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
