N-Channel Power MOSFET, 800V Vds, 15A Continuous Drain Current, 600mΩ Rds On. Features 300W Max Power Dissipation, 4.5V Nominal Vgs, and 32ns Fall Time. Packaged in TO-247AD for through-hole mounting. RoHS compliant silicon metal-oxide semiconductor FET with 150°C max operating temperature.
PackageTO-247AD
Current Rating15A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH15N80 technical specifications.
General
Package/Case
TO-247AD
Continuous Drain Current (ID)
15A
Current Rating
15A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
800V
Drain-source On Resistance-Max
600mR
Dual Supply Voltage
800V
Fall Time
32ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.87nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Nominal Vgs
4.5V
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
600mR
Reach SVHC Compliant
No
Reverse Recovery Time
250ns
RoHS Compliant
Yes
Series
HiPerFET™
Termination
Through Hole
Threshold Voltage
4.5V
Turn-Off Delay Time
63ns
DC Rated Voltage
800V
Weight
6g
Compliance
RoHS
Compliant
Datasheet
Ixys IXFH15N80 Datasheet
Download the complete datasheet for Ixys IXFH15N80 to view detailed technical specifications.
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