
N-Channel Power MOSFET, 800V Vds, 15A Continuous Drain Current, 600mΩ Rds On. Features 300W Max Power Dissipation, 4.5V Nominal Vgs, and 32ns Fall Time. Packaged in TO-247AD for through-hole mounting. RoHS compliant silicon metal-oxide semiconductor FET with 150°C max operating temperature.
Ixys IXFH15N80 technical specifications.
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