N-channel silicon MOSFET, 1200V drain-source breakdown voltage, 16A continuous drain current, and 0.95-ohm drain-source resistance. Features a TO-247 package for through-hole mounting, 660W maximum power dissipation, and operates from -55°C to 150°C. Includes a 30V gate-source voltage rating, 6.9nF input capacitance, 35ns fall time, and 66ns turn-off delay. RoHS compliant and lead-free.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power660W
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Technical Specifications
Ixys IXFH16N120P technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 1.2kV |
| Drain to Source Resistance | 950mR |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 6.9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 660W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 660W |
| Radiation Hardening | No |
| Rds On Max | 950mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
| Turn-Off Delay Time | 66ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH16N120P Datasheet
Download the complete datasheet for Ixys IXFH16N120P to view detailed technical specifications.
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