IXFH16N90Q

Power Field-Effect Transistor, 16A I(D), 900V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3

PackageTO-247-3

MountingThrough Hole

PolarityN-CHANNEL

Power360W

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Ixys IXFH16N90Q technical specifications.

Package/Case	TO-247-3
Continuous Drain Current (ID)	16A
Drain to Source Breakdown Voltage	900V
Drain to Source Resistance	650mR
Drain to Source Voltage (Vdss)	900V
Drain-source On Resistance-Max	650mR
Fall Time	14ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	4nF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	360W
Mount	Through Hole
Package Quantity	30
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	360W
Rds On Max	650mR
RoHS Compliant	Yes
Series	HiPerFET™
Turn-Off Delay Time	56ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.