N-Channel Power MOSFET, 1000V Vdss, 18A Continuous Drain Current. Features 660mΩ Rds On, 830W Max Power Dissipation, and a TO-247 plastic package for through-hole mounting. Operates from -55°C to 150°C with a 6.5V threshold voltage. Includes 37ns turn-on delay and 40ns turn-off delay.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power830W
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Technical Specifications
Ixys IXFH18N100Q3 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 660mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.26mm |
| Input Capacitance | 4.89nF |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 830W |
| Radiation Hardening | No |
| Rds On Max | 660mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Threshold Voltage | 6.5V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 37ns |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH18N100Q3 Datasheet
Download the complete datasheet for Ixys IXFH18N100Q3 to view detailed technical specifications.
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