The IXFH18N90P is a high-power N-channel MOSFET with a drain-to-source breakdown voltage of 900V and a continuous drain current of 18A. It features a low drain-to-source resistance of 600mR and a fast switching time with a fall time of 44ns and a turn-off delay time of 60ns. The device is packaged in a TO-247 case and is suitable for high-power applications. It operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power540W
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Technical Specifications
Ixys IXFH18N90P technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 44ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 5.23nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 540W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 540W |
| Rds On Max | 600mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
| Turn-Off Delay Time | 60ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH18N90P Datasheet
Download the complete datasheet for Ixys IXFH18N90P to view detailed technical specifications.
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