N-Channel Power MOSFET, 600V Drain-Source Breakdown Voltage, 20A Continuous Drain Current, and 350mΩ Drain-Source On-Resistance. Features a TO-247AD plastic package for through-hole mounting, 300W maximum power dissipation, and a maximum operating temperature of 150°C. Includes 3.3nF input capacitance and 20ns fall time. RoHS compliant and lead-free.
PackageTO-247AD
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Ixys IXFH20N60Q technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 350mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 350mR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 350mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 45ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH20N60Q Datasheet
Download the complete datasheet for Ixys IXFH20N60Q to view detailed technical specifications.
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