The IXFH20N80P is a TO-247 packaged N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 800V and a continuous drain current of 20A. The device has a maximum power dissipation of 500W and a drain to source resistance of 520mR. It is lead free and RoHS compliant, packaged in a rail/tube format with 30 devices per package.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power500W
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Technical Specifications
Ixys IXFH20N80P technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 520mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 4.685nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Radiation Hardening | No |
| Rds On Max | 520mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 85ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH20N80P Datasheet
Download the complete datasheet for Ixys IXFH20N80P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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