N-Channel Power MOSFET, 800V Drain-Source Voltage (Vdss) and 20A Continuous Drain Current (ID). Features 420mΩ Rds On Max, 360W Power Dissipation, and 150°C Max Operating Temperature. This silicon Metal-oxide Semiconductor FET is housed in a TO-247AD plastic package with through-hole mounting. Includes 5.1nF input capacitance and 14ns fall time.
PackageTO-247-3
Current Rating20A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH20N80Q technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 420mR |
| Drain to Source Voltage (Vdss) | 800V |
| Dual Supply Voltage | 800V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Nominal Vgs | 4.5V |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 420mR |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 250ns |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Through Hole |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 74ns |
| DC Rated Voltage | 800V |
| Weight | 6g |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH20N80Q Datasheet
Download the complete datasheet for Ixys IXFH20N80Q to view detailed technical specifications.
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