N-Channel Power MOSFET, 500V Drain-Source Voltage, 21A Continuous Drain Current, 250mΩ Rds On. Features 300W Max Power Dissipation, 150°C Max Operating Temperature, and TO-247-3 package for through-hole mounting. Includes 4.2nF Input Capacitance, 30ns Fall Time, and 65ns Turn-Off Delay Time. RoHS compliant.
PackageTO-247-3
Current Rating21A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH21N50 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
21A
Current Rating
21A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
250mR
Drain to Source Voltage (Vdss)
500V
Dual Supply Voltage
500V
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.2nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Nominal Vgs
4V
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Rds On Max
250mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HiPerFET™
Threshold Voltage
4V
Turn-Off Delay Time
65ns
DC Rated Voltage
500V
Compliance
RoHS
Compliant
Datasheet
Ixys IXFH21N50 Datasheet
Download the complete datasheet for Ixys IXFH21N50 to view detailed technical specifications.
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