N-Channel Power MOSFET, 500V Drain-Source Voltage, 21A Continuous Drain Current, 250mΩ Rds On. Features 300W Max Power Dissipation, 150°C Max Operating Temperature, and TO-247-3 package for through-hole mounting. Includes 4.2nF Input Capacitance, 30ns Fall Time, and 65ns Turn-Off Delay Time. RoHS compliant.
PackageTO-247-3
Current Rating21A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH21N50 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 21A |
| Current Rating | 21A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 500V |
| Dual Supply Voltage | 500V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 250mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 65ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH21N50 Datasheet
Download the complete datasheet for Ixys IXFH21N50 to view detailed technical specifications.
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