N-Channel Power MOSFET, 500V Drain-Source Voltage, 24A Continuous Drain Current, and 230mΩ Max Drain-Source On-Resistance. Features a 300W Max Power Dissipation and operates within a -55°C to 150°C temperature range. This silicon Metal-oxide Semiconductor FET is housed in a TO-247AD package with through-hole mounting. Includes a 4V Threshold Voltage and 20V Gate-to-Source Voltage rating.
PackageTO-247AD
Current Rating24A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH24N50 technical specifications.
General
Package/Case
TO-247AD
Continuous Drain Current (ID)
24A
Current Rating
24A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
230mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
230mR
Dual Supply Voltage
500V
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.2nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Nominal Vgs
4V
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
230mR
Reach SVHC Compliant
No
Reverse Recovery Time
250ns
RoHS Compliant
Yes
Series
HiPerFET™
Termination
Through Hole
Threshold Voltage
4V
Turn-Off Delay Time
65ns
DC Rated Voltage
500V
Weight
6g
Compliance
RoHS
Compliant
Datasheet
Ixys IXFH24N50 Datasheet
Download the complete datasheet for Ixys IXFH24N50 to view detailed technical specifications.
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