N-Channel Power MOSFET, 800V Drain-Source Breakdown Voltage, 24A Continuous Drain Current, and 400mΩ Drain-Source On-Resistance. Features include a 5V Threshold Voltage, 32ns Turn-On Delay Time, and 75ns Turn-Off Delay Time. This silicon, metal-oxide semiconductor FET is housed in a TO-247AD plastic package with through-hole mounting. Maximum power dissipation is 650W, with an operating temperature range of -55°C to 150°C. RoHS compliant and lead-free.
PackageTO-247AD
MountingThrough Hole
PolarityN-CHANNEL
Power650W
Quick Jump:
Technical Specifications
Ixys IXFH24N80P technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 400MR |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.46mm |
| Input Capacitance | 7.2nF |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 650W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 650W |
| Radiation Hardening | No |
| Rds On Max | 400mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 32ns |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH24N80P Datasheet
Download the complete datasheet for Ixys IXFH24N80P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
