N-Channel Power MOSFET, 900V Drain to Source Breakdown Voltage, 24A Continuous Drain Current, and 0.42ohm Rds On Max. This silicon, metal-oxide semiconductor FET features a TO-247 package for through-hole mounting, a maximum power dissipation of 660W, and operates within a temperature range of -55°C to 150°C. Key electrical characteristics include 3.5V nominal Vgs (threshold voltage), 38ns fall time, and 68ns turn-off delay time.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power660W
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Technical Specifications
Ixys IXFH24N90P technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 420mR |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 7.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 660W |
| Mount | Through Hole |
| Nominal Vgs | 3.5V |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 660W |
| Rds On Max | 420mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
| Threshold Voltage | 3.5V |
| Turn-Off Delay Time | 68ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH24N90P Datasheet
Download the complete datasheet for Ixys IXFH24N90P to view detailed technical specifications.
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