N-Channel Power MOSFET, 500V Drain-Source Voltage (Vdss), 26A Continuous Drain Current (ID), and 200mΩ Drain-Source On-Resistance (Rds On Max). This silicon, metal-oxide semiconductor FET features a TO-247AD package for through-hole mounting. Key specifications include a 300W maximum power dissipation, 4.2nF input capacitance, and a 4V nominal gate-source threshold voltage. Operating temperature range is -55°C to 150°C.
PackageTO-247AD
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Ixys IXFH26N50 technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 26A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 200mR |
| Dual Supply Voltage | 500V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.2nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 65ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH26N50 Datasheet
Download the complete datasheet for Ixys IXFH26N50 to view detailed technical specifications.
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