N-Channel Power MOSFET, 500V Vds, 26A Continuous Drain Current (ID), and 230mΩ Max Drain-Source On-Resistance (Rds On). Features include 400W Max Power Dissipation, 3.6nF Input Capacitance, and fast switching times with 20ns Turn-On Delay and 20ns Fall Time. Packaged in a TO-247 case for through-hole mounting, this silicon Metal-Oxide-Semiconductor FET operates from -55°C to 150°C and is RoHS compliant.
PackageTO-247
Current Rating26A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Ixys IXFH26N50P technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 26A |
| Current Rating | 26A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 230mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 230MR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.46mm |
| Input Capacitance | 3.6nF |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 400W |
| Rds On Max | 230mR |
| RoHS Compliant | Yes |
| Series | PolarHV™ HiPerFET™ |
| Turn-Off Delay Time | 58ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 500V |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH26N50P Datasheet
Download the complete datasheet for Ixys IXFH26N50P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
