N-Channel Power MOSFET, 500V Vds, 26A Continuous Drain Current (ID), and 200mΩ Max Drain-Source On-Resistance (Rds On). Features a 16ns fall time, 55ns turn-off delay, and 250ns reverse recovery time. Operates with a nominal Vgs of 4.5V and a maximum gate-source voltage of 20V. Housed in a TO-247AD plastic package with through-hole mounting, this component offers 300W maximum power dissipation and is RoHS compliant.
PackageTO-247AD
Current Rating26A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH26N50Q technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 26A |
| Current Rating | 26A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 200mR |
| Dual Supply Voltage | 500V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Nominal Vgs | 4.5V |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| Reach SVHC Compliant | Unknown |
| Reverse Recovery Time | 250ns |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Through Hole |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 55ns |
| DC Rated Voltage | 500V |
| Weight | 6g |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH26N50Q Datasheet
Download the complete datasheet for Ixys IXFH26N50Q to view detailed technical specifications.
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