The IXFH26N55Q is a high-power N-channel MOSFET from Ixys, featuring a maximum drain-to-source breakdown voltage of 550V and a continuous drain current of 26A. It has a maximum power dissipation of 375W and a maximum operating temperature of 150°C. The device is packaged in a TO-247-3 case and is mounted through a hole. It is RoHS compliant and part of the HiPerFET series.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power375W
Quick Jump:
Technical Specifications
Ixys IXFH26N55Q technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 26A |
| Drain to Source Breakdown Voltage | 550V |
| Drain to Source Resistance | 230mR |
| Drain to Source Voltage (Vdss) | 550V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 375W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 375W |
| Rds On Max | 230mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 50ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH26N55Q Datasheet
Download the complete datasheet for Ixys IXFH26N55Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
