N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 30A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 160mΩ drain-source resistance. Designed for through-hole mounting in a TO-247 package, it boasts a maximum power dissipation of 360W and a fast fall time of 26ns. Operating temperature range is -55°C to 150°C.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power360W
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Technical Specifications
Ixys IXFH30N50 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 500V |
| Dual Supply Voltage | 500V |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.7nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 160mR |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 250ns |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Through Hole |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 110ns |
| Weight | 6g |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH30N50 Datasheet
Download the complete datasheet for Ixys IXFH30N50 to view detailed technical specifications.
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