The IXFH30N50Q is a high-power N-channel power MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 500V and a continuous drain current of 30A. The device has a maximum power dissipation of 360W and a drain to source resistance of 160mR. It is packaged in a TO-247-3 package and is available in a rail/tube packaging configuration. The IXFH30N50Q is RoHS compliant and part of the HiPerFET series.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power360W
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Technical Specifications
Ixys IXFH30N50Q technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.7nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 75ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH30N50Q Datasheet
Download the complete datasheet for Ixys IXFH30N50Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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