IXYS

IXFH32N50

Datasheet

500V 32A N-Channel MOSFET TO-247 150mR Rds(on)

Ixys

IXFH32N50

Name: IXFH32N50 Ixys
Brand: Ixys
SKU: IXFH32N50

500V 32A N-Channel MOSFET TO-247 150mR Rds(on)

N-Channel Power MOSFET, 500V Drain-Source Breakdown Voltage, 32A Continuous Drain Current, and 150mΩ Maximum Drain-Source On-Resistance. Features a 360W Maximum Power Dissipation and TO-247AD package for through-hole mounting. Operates within a temperature range of -55°C to 150°C, with a 20V Gate-to-Source Voltage and 4V Threshold Voltage. Includes 5.7nF Input Capacitance and fast switching times with a 26ns Fall Time and 110ns Turn-Off Delay. RoHS compliant and lead-free.

PackageTO-247AD

Current Rating32A

MountingThrough Hole

PolarityN-CHANNEL

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Technical Specifications

Ixys IXFH32N50 technical specifications.

General

Package/Case	TO-247AD
Continuous Drain Current (ID)	32A
Current Rating	32A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	150mR
Drain to Source Voltage (Vdss)	500V
Drain-source On Resistance-Max	150mR
Dual Supply Voltage	500V
Fall Time	26ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	5.7nF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	360W
Mount	Through Hole
Nominal Vgs	4V
Number of Elements	1
Package Quantity	30
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	360W
Radiation Hardening	No
Rds On Max	150mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	HiPerFET™
Threshold Voltage	4V
Turn-Off Delay Time	110ns
DC Rated Voltage	500V