
N-Channel Power MOSFET, 500V Drain-Source Breakdown Voltage, 32A Continuous Drain Current, and 150mΩ Maximum Drain-Source On-Resistance. Features a 360W Maximum Power Dissipation and TO-247AD package for through-hole mounting. Operates within a temperature range of -55°C to 150°C, with a 20V Gate-to-Source Voltage and 4V Threshold Voltage. Includes 5.7nF Input Capacitance and fast switching times with a 26ns Fall Time and 110ns Turn-Off Delay. RoHS compliant and lead-free.
Ixys IXFH32N50 technical specifications.
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