N-Channel Power MOSFET, 500V Drain-Source Breakdown Voltage, 32A Continuous Drain Current, and 150mΩ Maximum Drain-Source On-Resistance. Features a 360W Maximum Power Dissipation and TO-247AD package for through-hole mounting. Operates within a temperature range of -55°C to 150°C, with a 20V Gate-to-Source Voltage and 4V Threshold Voltage. Includes 5.7nF Input Capacitance and fast switching times with a 26ns Fall Time and 110ns Turn-Off Delay. RoHS compliant and lead-free.
PackageTO-247AD
Current Rating32A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Ixys IXFH32N50 technical specifications.
General
Package/Case
TO-247AD
Continuous Drain Current (ID)
32A
Current Rating
32A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
150mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
150mR
Dual Supply Voltage
500V
Fall Time
26ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
5.7nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360W
Mount
Through Hole
Nominal Vgs
4V
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
360W
Radiation Hardening
No
Rds On Max
150mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HiPerFET™
Threshold Voltage
4V
Turn-Off Delay Time
110ns
DC Rated Voltage
500V
Compliance
RoHS
Compliant
Datasheet
Ixys IXFH32N50 Datasheet
Download the complete datasheet for Ixys IXFH32N50 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
