Ixys
IXFH35N30
Power Field-Effect Transistor, 35A I(D), 300V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
PackageTO-247-3
Current Rating35A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Ixys IXFH35N30 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
35A
Current Rating
35A
Drain to Source Breakdown Voltage
300V
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
300V
Fall Time
45ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.8nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Rds On Max
100mR
RoHS Compliant
Yes
Series
HiPerFET™
Turn-Off Delay Time
75ns
DC Rated Voltage
300V
Compliance
RoHS
Compliant
Datasheet
Ixys IXFH35N30 Datasheet
Download the complete datasheet for Ixys IXFH35N30 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
