N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 36A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 190mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 650W. Designed for through-hole mounting in a TO-247 package, it boasts fast switching characteristics with a 22ns fall time. Operating temperature range spans from -55°C to 150°C, with a gate-source voltage rating of 30V.
PackageTO-247
Current Rating36A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH36N60P technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 36A |
| Current Rating | 36A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.46mm |
| Input Capacitance | 5.8nF |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 650W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 650W |
| Rds On Max | 190mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PolarHV™ HiPerFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 30ns |
| DC Rated Voltage | 600V |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH36N60P Datasheet
Download the complete datasheet for Ixys IXFH36N60P to view detailed technical specifications.
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