N-Channel Power MOSFET, 300V Drain-Source Breakdown Voltage, 40A Continuous Drain Current, and 85mΩ Max Drain-Source On-Resistance. Features a 300W Max Power Dissipation and operates within a -55°C to 150°C temperature range. This single-element silicon FET utilizes a TO-247AD package for through-hole mounting. Includes 4.8nF input capacitance and 45ns fall time.
PackageTO-247AD
Current Rating40A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH40N30 technical specifications.
General
Package/Case
TO-247AD
Continuous Drain Current (ID)
40A
Current Rating
40A
Drain to Source Breakdown Voltage
300V
Drain to Source Resistance
85mR
Drain to Source Voltage (Vdss)
300V
Drain-source On Resistance-Max
85MR
Dual Supply Voltage
300V
Fall Time
45ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.8nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Nominal Vgs
4V
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
85mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
HiPerFET™
Threshold Voltage
4V
Turn-Off Delay Time
75ns
DC Rated Voltage
300V
Compliance
RoHS
Compliant
Datasheet
Ixys IXFH40N30 Datasheet
Download the complete datasheet for Ixys IXFH40N30 to view detailed technical specifications.
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