Ixys
IXFH42N20
Power Field-Effect Transistor, 42A I(D), 200V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
PackageTO-247AD
Current Rating42A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH42N20 technical specifications.
General
Package/Case
TO-247AD
Continuous Drain Current (ID)
42A
Current Rating
42A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
60mR
Drain to Source Voltage (Vdss)
200V
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.4nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Rds On Max
60mR
RoHS Compliant
Yes
Series
HiPerFET™
Turn-Off Delay Time
72ns
DC Rated Voltage
200V
Compliance
RoHS
Compliant
Datasheet
Ixys IXFH42N20 Datasheet
Download the complete datasheet for Ixys IXFH42N20 to view detailed technical specifications.
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