The IXFH4N100Q is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a continuous drain current of 4A and a drain to source breakdown voltage of 1kV. The device is packaged in a TO-247-3 plastic package and is lead-free and RoHS compliant. It has a maximum power dissipation of 150W and a turn-off delay time of 32ns.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power150W
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Technical Specifications
Ixys IXFH4N100Q technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.05nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Rds On Max | 3R |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 32ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH4N100Q Datasheet
Download the complete datasheet for Ixys IXFH4N100Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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