N-Channel Power MOSFET, 200V Vds, 50A Continuous Drain Current (ID), and 45mΩ Max Drain-Source On-Resistance (Rds On). This single-element silicon FET features a 300W power dissipation and a TO-247AD package for through-hole mounting. Operating temperature range is -55°C to 150°C, with a 20V Gate-to-Source Voltage (Vgs). RoHS compliant.
PackageTO-247AD
Current Rating50A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH50N20 technical specifications.
General
Package/Case
TO-247AD
Continuous Drain Current (ID)
50A
Current Rating
50A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
45mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
45MR
Dual Supply Voltage
200V
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.4nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Nominal Vgs
4V
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
45mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HiPerFET™
Threshold Voltage
4V
Turn-Off Delay Time
72ns
DC Rated Voltage
200V
Compliance
RoHS
Compliant
Datasheet
Ixys IXFH50N20 Datasheet
Download the complete datasheet for Ixys IXFH50N20 to view detailed technical specifications.
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