N-channel power MOSFET featuring 600V drain-source breakdown voltage and 50A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 145mΩ drain-source resistance. Designed for through-hole mounting in a TO-247 package, it supports a maximum power dissipation of 1.04kW and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 31ns turn-on delay and a 17ns fall time.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power1.04kW
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Technical Specifications
Ixys IXFH50N60P3 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 145mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.46mm |
| Input Capacitance | 6.3nF |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.04kW |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.04kW |
| Rds On Max | 145mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™, Polar3™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 62ns |
| Turn-On Delay Time | 31ns |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH50N60P3 Datasheet
Download the complete datasheet for Ixys IXFH50N60P3 to view detailed technical specifications.
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