N-Channel Power MOSFET, 200V Drain-Source Voltage, 58A Continuous Drain Current, and 40mΩ Max Drain-Source On-Resistance. Features a 300W Max Power Dissipation and 4.4nF Input Capacitance. Designed for through-hole mounting in a TO-247AD package. Operates from -55°C to 150°C with a 20V Gate-Source Voltage rating.
PackageTO-247AD
Current Rating58A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH58N20 technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 58A |
| Current Rating | 58A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 40MR |
| Dual Supply Voltage | 200V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 72ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH58N20 Datasheet
Download the complete datasheet for Ixys IXFH58N20 to view detailed technical specifications.
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