N-Channel Power MOSFET, 200V Drain-Source Voltage, 58A Continuous Drain Current, and 40mΩ Max Drain-Source On-Resistance. Features a 300W Max Power Dissipation and 4.4nF Input Capacitance. Designed for through-hole mounting in a TO-247AD package. Operates from -55°C to 150°C with a 20V Gate-Source Voltage rating.
PackageTO-247AD
Current Rating58A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFH58N20 technical specifications.
General
Package/Case
TO-247AD
Continuous Drain Current (ID)
58A
Current Rating
58A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
40mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
40MR
Dual Supply Voltage
200V
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.4nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Nominal Vgs
4V
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
40mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HiPerFET™
Threshold Voltage
4V
Turn-Off Delay Time
72ns
DC Rated Voltage
200V
Compliance
RoHS
Compliant
Datasheet
Ixys IXFH58N20 Datasheet
Download the complete datasheet for Ixys IXFH58N20 to view detailed technical specifications.
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