IXFH69N30P

N-Channel Power MOSFET, 300V Drain to Source Voltage (Vdss), 69A Continuous Drain Current (ID), and 49mR Drain to Source Resistance (Rds On Max). This silicon, metal-oxide semiconductor FET features a TO-247 package for through-hole mounting, a maximum power dissipation of 500W, and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 27ns fall time, 25ns turn-on delay, and 75ns turn-off delay, with an input capacitance of 4.96nF and a gate-to-source voltage rating of 20V. This RoHS compliant component is lead-free.