Ixys
IXFH6N100Q
Power Field-Effect Transistor, 6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
PackageTO-247AD
MountingThrough Hole
PolarityN-CHANNEL
Power180W
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Technical Specifications
Ixys IXFH6N100Q technical specifications.
General
Package/Case
TO-247AD
Continuous Drain Current (ID)
6A
Drain to Source Breakdown Voltage
1kV
Drain to Source Resistance
1.9R
Drain to Source Voltage (Vdss)
1kV
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.2nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
180W
Mount
Through Hole
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
180W
Radiation Hardening
No
Rds On Max
1.9R
RoHS Compliant
Yes
Series
HiPerFET™
Turn-Off Delay Time
22ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFH6N100Q Datasheet
Download the complete datasheet for Ixys IXFH6N100Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.